SiC provides 10x the dielectric breakdown electric field energy of silicon, making it possible to realize larger breakdown voltages via reduced resistivity and a thinner drift layer. This allows a lower normalized ON resistance (ON resistance for every device location) at the same stand up to voltage. The SiC-SBD enables https://juliusipswx.bluxeblog.com/49089485/the-definitive-guide-to-sic-schottky-diode-manufactures